It is very nice when something reminds about the work you have done long time ago. Indeed, I am very proud to be a co-author of the article in the journal "Proceedings of MIPT" which has been peer reviewed, processed, and finally published 2 years and 8 months after submission. This paper is based on my Bachelor Thesis and deals with infrared photodiodes. To be exact, the title is "Investigation of charge transfer mechanisms in HgCdTe photodiodes". I must apologize to foreigners because the article is written in Russian and is not translated into English. However, readers (if any) who are interested in this work can approach me with a request for translation without hesitation. If this is the case, I will do my best to get them acquainted with the results we have obtained.
I am very grateful to the supervisor of my Bachelor research, Prof. Konstantin Olegovich Boltar', and greatly appreciate his assistance in theoretical studying of narrow-band semiconductors and, certainly, many experimental skills that I learnt during 2006-2007 (cryostat technique and data processing). So this article is in honour of Prof. Boltar'!
Article details: S.N. Filippov, K.O. Boltar: Investigation of charge transfer mechanisms in HgCdTe photodiodes [in Russian], Proceedings of MIPT 2(1), 52-66 (2010)
We have investigated photodiodes using liquid phase epitaxy and molecular beam epitaxy grown HgCdTe layers, meant for the detection of radiation in 3...5 mkm and 8...12 mkm spectral regions. The charge transfer mechanism analysis is based on current-voltage and resistance-voltage characteristics measured as a function of temperature in the range of 70...300 K. Current-voltage and resistance-voltage characteristics are simulated, with diffusion, generation-recombination, interband tunneling, trap to band tunneling, ohmic leakage, and infrared background radiation being taken into account. The numerical simulation of measured characteristics allowed to distinguish current mechanisms. Also it helped determine the ranges of temperature and voltage, over which a concrete charge transfer mechanism prevails. The temperature dependence of current components has been analyzed. Important HgCdTe properties such as the dopant energy level, carrier lifetime, and the trap level have been estimated.
The article is available here [pdf, 771kB].